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BN1F4M The NEC BN1F4M is a PNP Silicon Transistor. It features a maximum collector current of 100mA and a collector-emitter voltage of 50V.
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BN1F4M

Available from 1 distributors
Mfr Name: NEC
NEC
The NEC BN1F4M is a PNP Silicon Transistor. It features a maximum collector current of 100mA and a collector-emitter voltage of 50V.
✓ Total Stock: 2,141 pcs
$ Price Range: $1.17

BN1F4M Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,141 pcs
On Request
2141 pcs On Request 1 On Request On Request 07+ On Request On Request
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BN1F4M Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BN1F4M Description

Short technical summary and product information.

The BN1F4M from NEC is a PNP Silicon Transistor designed for various electronic applications. It offers a maximum collector current of 100mA and a collector-emitter voltage rating of 50V.

 

This transistor has a maximum power dissipation of 250mW and a maximum operating temperature of 150°C. Its specifications make it suitable for general-purpose amplification and switching tasks.

 

Further details regarding package type, mounting, and specific application suitability would typically be found in the manufacturer's datasheet.

BN1F4M Quick Information

Product Type: Transistor
Canonical Name: BN1F4M PNP Silicon Transistor
Subcategory: PNP Silicon Transistor

BN1F4M Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BN1F4M Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

BN1F4M Features

  • PNP Silicon Transistor by NEC.
  • Maximum Collector Current: 100mA.
  • Collector Emitter Voltage: 50V.
  • Maximum Power Dissipation: 250mW.
  • Maximum Operating Temperature: 150°C.

BN1F4M Applications

  • Used in general purpose switching circuits.
  • Suitable for low power amplification stages.
  • Common in signal processing applications.
  • Ideal for portable electronic devices.
  • Applied in driver circuit interfaces.

BN1F4M FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the BN1F4M transistor?

The maximum collector current for the BN1F4M is 100mA.

What is the collector-emitter voltage rating of the BN1F4M?

The collector-emitter voltage for the BN1F4M is 50V.

What is the maximum power dissipation for the BN1F4M transistor?

The maximum power dissipation for the BN1F4M is 250mW.

What is the maximum operating temperature for the BN1F4M transistor?

The maximum operating temperature for the BN1F4M is 150°C.

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