| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
306 pcs
|
306 pcs | On Request | 1 | On Request | On Request | 00+/97+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature |
The Philips BLV103 is an NPN silicon planar epitaxial transistor designed for common emitter, class-AB operation in cellular radio base stations within the 960 MHz frequency band. It features internal matching for optimum wideband capability and high gain, along with emitter-ballasting resistors for an improved temperature profile. Gold metallization ensures excellent reliability.
Encapsulated in a 6-lead SOT-171 flange envelope with a ceramic cap, all leads are isolated from the mounting base. Key electrical specifications include a collector-emitter voltage of 30V, a collector current of 1.25A, and a total power dissipation of 17W at 25°C. RF performance at 960 MHz in class-AB operation shows a power gain greater than 11.5 dB and collector efficiency greater than 45% with an output power of 4W at 24V.
This transistor is intended for applications requiring high power and gain at UHF frequencies, such as in telecommunications infrastructure. Its robust construction and specific design features make it suitable for demanding base station environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V
1.25 A
4 W nominal
SOT-171 surface-mount
200 °C
-65 to 150 °C