BLV103 The Philips BLV103 is an NPN silicon planar epitaxial UHF power transistor. It is encapsulated in a 6-lead SOT-171 flange envelope.
Mfr Part #:

BLV103

Available from 1 distributors
Mfr Name: Philips
Philips
The Philips BLV103 is an NPN silicon planar epitaxial UHF power transistor. It is encapsulated in a 6-lead SOT-171 flange envelope.
✓ Total Stock: 306 pcs
$ Price Range: $0.85

BLV103 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
306 pcs
306 pcs On Request 1 On Request On Request 00+/97+ On Request On Request

BLV103 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
SVHC Present
Storage Temperature

BLV103 Description

Short technical summary and product information.

The Philips BLV103 is an NPN silicon planar epitaxial transistor designed for common emitter, class-AB operation in cellular radio base stations within the 960 MHz frequency band. It features internal matching for optimum wideband capability and high gain, along with emitter-ballasting resistors for an improved temperature profile. Gold metallization ensures excellent reliability.

 

Encapsulated in a 6-lead SOT-171 flange envelope with a ceramic cap, all leads are isolated from the mounting base. Key electrical specifications include a collector-emitter voltage of 30V, a collector current of 1.25A, and a total power dissipation of 17W at 25°C. RF performance at 960 MHz in class-AB operation shows a power gain greater than 11.5 dB and collector efficiency greater than 45% with an output power of 4W at 24V.

 

This transistor is intended for applications requiring high power and gain at UHF frequencies, such as in telecommunications infrastructure. Its robust construction and specific design features make it suitable for demanding base station environments.

BLV103 Quick Information

Product Type: UHF Power Transistor
Canonical Name: BLV103 NPN Silicon Planar Epitaxial Transistor
Subcategory: NPN

BLV103 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLV103 Estimated Pricing

Qty Low High
1+ $0.85 $0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLV103 Features

  • NPN silicon planar epitaxial transistor
  • Internal matching for wideband capability
  • Emitter-ballasting resistors for temperature profile
  • Gold metallization ensures reliability
  • SOT-171 6-lead flange envelope

BLV103 Applications

  • Cellular radio base stations
  • 960 MHz frequency band applications
  • Common emitter class-AB operation
  • High gain RF power amplification

BLV103 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

30 V

What is the maximum collector current?

1.25 A

What is the RF output power at 960 MHz?

4 W nominal

What is the package type?

SOT-171 surface-mount

What is the maximum junction temperature?

200 °C

What is the storage temperature range?

-65 to 150 °C

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