| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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23 pcs
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23 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The NXP Semiconductors BLF888BS is a high-performance RF transistor suitable for digital transmitter applications. It is engineered to provide 300W of broadband power output across the entire UHF band, from 470 MHz to 860 MHz.
This device exhibits excellent ruggedness and consistent broadband performance, making it an ideal choice for demanding RF applications. Key electrical specifications include a breakdown voltage of 89V, a drain-source resistance of 110mΩ, and a test current of 1.4A. The transistor operates within a wide temperature range, from -65°C to 200°C.
Mechanically, the BLF888BS features a screw mount type and has 4 terminals. Its robust design and specifications make it a reliable component for various RF power amplification needs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The component operates reliably from -65 °C to 200 °C.
It utilizes a screw mount configuration with four terminals.
The specified breakdown voltage is 89 volts.
The device provides 300 watts of broadband power output.
The drain-source resistance measures 110 milliohms.
It operates within a 470 to 860 megahertz bandwidth.
