| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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68 pcs
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68 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
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| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel |
The NXP Semiconductors BLF878 is a high-performance RF transistor ideal for digital transmitter applications. It is engineered to deliver 300 W of broadband power across the entire UHF frequency band, ranging from 470 MHz to 860 MHz.
This device boasts excellent ruggedness and broadband performance, making it a reliable choice for demanding applications. Key electrical specifications include a breakdown voltage of 89V, a drain-source resistance of 110mΩ, and a test current of 1.4A. It operates efficiently with a current rating of 1.4µA.
Designed for robust operation, the BLF878 can withstand a maximum operating temperature of 200°C and a minimum of -65°C. It features a screw mount type for secure installation and has 4 terminals for connectivity.
This transistor is suitable for various RF power amplification needs within the specified frequency range, providing consistent performance and durability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum power dissipation is 300 W.
The transistor operates over a broadband from 470 MHz to 860 MHz.
The breakdown voltage is 89 V.
The maximum operating temperature is 200°C.
The minimum operating temperature is -65°C.
The BLF878 transistor features a screw mount type.