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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BLF888,112 is a 500 W LDMOS RF power transistor suitable for broadcast transmitter and industrial applications. It is optimized for digital applications and can deliver 110 W average DVB-T broadband power across the full UHF band, from 470 MHz to 860 MHz.
Key electrical characteristics include a peak envelope power load power of 500 W and a power gain of 19 dB at 860 MHz under specific test conditions. The transistor also offers a drain efficiency of 46% for 2-Tone performance and 31% for DVB performance.
Absolute maximum ratings include a drain-source voltage of 104 V and a gate-source voltage range of -0.5 to +11 V. The junction temperature is rated at 200 ℃, with a storage temperature range of -65 to +150 ℃.
This RF power transistor is housed in a SOT979A package and is designed for surface mount applications. Its excellent ruggedness makes it ideal for demanding digital transmitter applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak envelope power load power is 500 W.
The power gain is 19 dB.
The average output power is 110 W.
The operating frequency range is 470 MHz to 860 MHz.
The package type is SOT979A.
The absolute maximum drain-source voltage is 104 V, and the gate-source voltage is -0.5 to +11 V.