| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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66 pcs
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66 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This RF Power Transistor from Ampleon, part number BLF6927-10G,118, is built using the LDMOS process. It is engineered to operate efficiently within a frequency range of 2.3 GHz to 2.7 GHz.
The device delivers a nominal output power of 10 W and provides a gain of 19 dB. It requires a supply voltage of 28 V and has a typical efficiency of 20%. The transistor is housed in a SOT-975C package, suitable for RF applications.
Key electrical characteristics include a nominal current (Id) of 130 mA. This component is classified as an RF Power Discrete Transistor, making it suitable for various high-frequency power amplification tasks in telecommunications and radar systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF6G27-10G,118 transistor operates from 2.3 GHz to 2.7 GHz.
The output power of the BLF6G27-10G,118 is 10 W.
The gain of the BLF6G27-10G,118 transistor is 19 dB.
The BLF6G27-10G,118 requires a supply voltage of 28 V.
The BLF6G27-10G,118 is supplied in a SOT-975C package.