| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
527 pcs
|
527 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Efficiency | |
| Gain | |
| Output Power | |
| Process | |
| Supply Voltage | |
| Type |
The Ampleon BLF6G27-10G,112 is a high-performance RF Power Transistor utilizing LDMOS technology. It is engineered to operate efficiently within the 2.3 GHz to 2.7 GHz frequency band, delivering a nominal output power of 10 W with a typical gain of 19 dB. The transistor requires a supply voltage of 28 V and has a typical current draw of 130 mA, with a typical efficiency of 20%.
This component is housed in a SOT975C package, suitable for surface-mount applications. Its robust design makes it suitable for various RF power amplification tasks. The BLF6G27-10G,112 is classified as an RF Power Discrete Transistor, indicating its specialized function in high-frequency power circuits.
Key electrical characteristics include its operating frequency range, output power, and gain, making it a versatile choice for demanding RF applications. The LDMOS process ensures reliable performance under challenging conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating frequency range is from 2.3 GHz to 2.7 GHz.
The nominal output power is 10 W.
The typical gain is 19 dB.
It requires a supply voltage of 28 V.
The process used is LDMOS.
It is supplied in the SOT975C package.