| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | 1040/ | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature |
The NXP Semiconductors BLF6G27-10 is a 10W LDMOS power transistor suitable for base station applications operating in the frequency ranges of 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.
Key features include integrated ESD protection, excellent ruggedness, high efficiency, and excellent thermal stability. It is designed for broadband operation and is internally matched for ease of use. The transistor offers typical performance of 2W average power output with 19dB gain and 20% efficiency for 1-carrier N-CDMA at 2500-2700 MHz.
This device is qualified up to a maximum VDS operation of 32V. It is available in a SOT975C package, which is an earless flanged ceramic package with 2 leads. The mounting type is surface mount.
The BLF6G27-10 is compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF6G27-10 operates in the frequency range of 2300 MHz to 2700 MHz.
The typical average power output is 2W for 1-carrier N-CDMA and IS-95 modes.
The typical power gain is 19dB for 1-carrier N-CDMA and 22.5dB for IS-95.
The typical efficiency is 20% for 1-carrier N-CDMA and 24.8% for IS-95.
The drain-source breakdown voltage is a minimum of 65V.
The gate-source threshold voltage is typically between 1.4V and 2.4V.
The BLF6G27-10 is supplied in a SOT975C package.