BLF6G27-10 The NXP Semiconductors BLF6G27-10 is an RF Power LDMOS transistor designed for base station applications. It operates within the 2300 MHz to 2700 MHz frequency range.
Mfr Part #:

BLF6G27-10

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLF6G27-10 is an RF Power LDMOS transistor designed for base station applications. It operates within the 2300 MHz to 2700 MHz frequency range.
✓ Total Stock: 500 pcs
$ Price Range: $0.99

BLF6G27-10 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
300 pcs
300 pcs On Request 1 On Request On Request 1040/ On Request On Request
Non-Authorised Inventory information
200 pcs
200 pcs On Request 1 On Request On Request 12+ On Request On Request

BLF6G27-10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BLF6G27-10 Description

Short technical summary and product information.

The NXP Semiconductors BLF6G27-10 is a 10W LDMOS power transistor suitable for base station applications operating in the frequency ranges of 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.

 

Key features include integrated ESD protection, excellent ruggedness, high efficiency, and excellent thermal stability. It is designed for broadband operation and is internally matched for ease of use. The transistor offers typical performance of 2W average power output with 19dB gain and 20% efficiency for 1-carrier N-CDMA at 2500-2700 MHz.

 

This device is qualified up to a maximum VDS operation of 32V. It is available in a SOT975C package, which is an earless flanged ceramic package with 2 leads. The mounting type is surface mount.

 

The BLF6G27-10 is compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).

BLF6G27-10 Quick Information

Product Type: RF Power Transistor
Series: BLF6G27
Canonical Name: BLF6G27-10 RF Power LDMOS Transistor
Subcategory: LDMOS

BLF6G27-10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF6G27-10 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF6G27-10 Features

  • 10W LDMOS power transistor for base stations.
  • Operates from 2300 to 2700 MHz.
  • Typical 2W Pout, 19dB gain, 20% efficiency.
  • Qualified up to 32V VDS operation.
  • SOT975C surface mount package.

BLF6G27-10 Applications

  • RF power amplifiers for base stations
  • Multicarrier applications in 2.3-2.7 GHz
  • WiMAX power amplifier circuits
  • N-CDMA and IS-95 infrastructure amplifiers

BLF6G27-10 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating frequency range for the BLF6G27-10?

The BLF6G27-10 operates in the frequency range of 2300 MHz to 2700 MHz.

What is the typical power output of the BLF6G27-10?

The typical average power output is 2W for 1-carrier N-CDMA and IS-95 modes.

What is the typical power gain of the BLF6G27-10?

The typical power gain is 19dB for 1-carrier N-CDMA and 22.5dB for IS-95.

What is the typical efficiency of the BLF6G27-10?

The typical efficiency is 20% for 1-carrier N-CDMA and 24.8% for IS-95.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is a minimum of 65V.

What is the gate-source threshold voltage?

The gate-source threshold voltage is typically between 1.4V and 2.4V.

What is the package type for the BLF6G27-10?

The BLF6G27-10 is supplied in a SOT975C package.

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