MC33072DR2G
On Semiconductor
The ON Semiconductor MC33072DR2G is a dual operational amplifier designed for industrial applications. It offers a wide supply voltage range and good performance characteristics.
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63,000 pcs
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63000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BFR93AE6327 is an NPN silicon RF bipolar transistor. It is designed for use in RF applications and operates within a temperature range of -65°C to +150°C.
Key electrical specifications include a maximum collector-emitter voltage (VCEO Max) of 12V, an emitter-base voltage (VEBO) of 2V, and a maximum DC collector current (IC Max) of 0.09A. The power dissipation (Pd) is rated at 300mW.
This transistor is housed in a SOT-23 surface-mount package and is supplied on a reel. The mounting style is SMD/SMT, making it suitable for automated assembly processes. The standard package quantity is 3000 units.
This component is part of the BFR93 series from Infineon Technologies. Its specifications make it suitable for various RF circuit designs requiring small signal amplification.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO Max) for the BFR93AE6327 is 12V.
The power dissipation (Pd) of the BFR93AE6327 transistor is 300mW.
The BFR93AE6327 operates within a temperature range of -65°C to +150°C.
The BFR93AE6327 is supplied in a SOT-23 package.
The standard package quantity for the BFR93AE6327 is 3000 units.