IPB180N04S4-00
Infineon
The Infineon IPB180N04S4-00 is an N-channel Automotive MOSFET from the OptiMOS®-T2 series. It offers a 40V drain-source breakdown voltage and a continuous drain current of 180A.
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The BFR90 is a Silicon NPN Planar RF Transistor manufactured by Telefunken, suitable for applications requiring high gain and low noise, such as small-signal amplifiers. It also excels in applications demanding fast switching times.
Key electrical specifications include a typical current-gain bandwidth product (fT) of 5.0 GHz at 14 mA collector current and 10V collector-emitter voltage. The device exhibits a low noise figure (NF) of 2.4 dB at 0.5 GHz and a maximum power gain (Gmax) of 18 dB at 0.5 GHz. The collector current is rated up to 30 mA, with a collector-emitter voltage of 15 Vdc and a collector-base voltage of 20 Vdc.
This transistor is housed in a TO-50 package. The absolute maximum ratings include a total device dissipation of 180 mW at 60°C, with a derating of 2.0 mW/°C above that temperature. The maximum operating temperature is 150°C.
Applications include high-gain, low-noise small-signal amplifiers and circuits requiring fast switching characteristics.
| Qty | Low | High |
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical current-gain bandwidth product (fT) for the BFR90 transistor is 5.0 GHz.
The typical noise figure (NF) of the BFR90 at 0.5 GHz is 2.4 dB.
The maximum collector current (IC) for the BFR90 is 30 mA.
The collector-emitter voltage (VCEO) rating for the BFR90 is 15 Vdc.
The BFR90 transistor is supplied in a TO-50 package.
The total device dissipation (PD) for the BFR90 at 60°C is 180 mW.
The maximum operating temperature for the BFR90 is 150°C.
