| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
180 pcs
|
180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
152 pcs
|
152 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon IPB180N04S4-00 is an N-channel OptiMOS®-T2 Power-Transistor designed for automotive applications. This AEC-qualified MOSFET features a 40V drain-source breakdown voltage and an ultra-low on-state resistance (RDS(on)) of typically 0.8 mΩ at 100A.
Key electrical characteristics include a continuous drain current of 180A at 25°C case temperature and a maximum operating temperature of 175°C. It also boasts a low gate threshold voltage and efficient switching characteristics with specified turn-on and turn-off delay times.
The device is housed in a PG-TO263-7-3 package, suitable for surface mounting. It is rated for MSL1 and operates across a wide temperature range from -55°C to +175°C, making it robust for demanding automotive environments.
Compliance includes RoHS3 status. The IPB180N04S4-00 is 100% avalanche tested, ensuring reliability under surge conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 3V.
The typical drain-source on-state resistance is 0.8mΩ.
The continuous drain current at 25°C case temperature is 180A.
The maximum operating and storage temperature is 175°C.
The package type is PG-TO263-7-3.
The Moisture Sensitivity Level is 1 Unlimited.