BFQ19S H6327 The Infineon BFQ19S H6327 is an RF NPN bipolar junction transistor designed for high-frequency applications. It features a gain bandwidth product of 5.5 GHz.
Mfr Part #:

BFQ19S H6327

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon BFQ19S H6327 is an RF NPN bipolar junction transistor designed for high-frequency applications. It features a gain bandwidth product of 5.5 GHz.
✓ Total Stock: 3,774 pcs
$ Price Range: $0.24

BFQ19S H6327 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,350 pcs
2350 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
1,424 pcs
1424 pcs On Request 1 On Request On Request 1607+ On Request On Request

BFQ19S H6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Mounting Style
Power Dissipation

BFQ19S H6327 Description

Short technical summary and product information.

The Infineon BFQ19S H6327 is an RF NPN bipolar junction transistor (BJT) suitable for various high-frequency applications. It operates with a maximum Collector-Emitter Voltage (VCEO) of 15V and a maximum Collector-Base Voltage (VCBO) of 20V, with an Emitter-Base Voltage (VEBO) of 3V.

 

This transistor boasts a typical gain bandwidth product (fT) of 5.5 GHz and a maximum DC current gain (hFE) of 140, with a minimum DC collector/base gain (hfe) of 70. It can handle a continuous collector current (IC) of 120 mA and has a power dissipation (Pd) of 1W. The operating temperature range is from -65 C to +150 C.

 

Packaged in an SMD/SMT SOT-89-4 case, the BFQ19S H6327 is supplied on a reel. Its RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1 Unlimited. This component is part of Infineon's RF solutions portfolio, which includes transistors and other devices for RF applications.

BFQ19S H6327 Quick Information

Product Type: RF Bipolar Transistor
Series: BFQ19
Canonical Name: BFQ19S H6327 RF NPN Bipolar Junction Transistor
Subcategory: RF BIP TRANSISTORS

BFQ19S H6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BFQ19S H6327 Estimated Pricing

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1+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFQ19S H6327 Features

  • RF NPN bipolar junction transistor.
  • 5.5 GHz typical gain bandwidth product.
  • 120 mA continuous collector current.
  • SOT-89-4 SMD/SMT package.
  • Wide operating temperature range.

BFQ19S H6327 Applications

  • RF amplifier stages up to 5.5GHz.
  • High-speed switching circuits.
  • Wireless communication transceivers.
  • Oscillator and mixer designs.

BFQ19S H6327 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BFQ19S H6327?

15 V.

What is the gain bandwidth product of this transistor?

5.5 GHz typical.

What package is the BFQ19S H6327 available in?

SOT-89-4 surface-mount package.

What is the operating temperature range?

-65°C to +150°C.

What is the continuous collector current rating?

120 mA.

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