| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,350 pcs
|
2350 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,424 pcs
|
1424 pcs | On Request | 1 | On Request | On Request | 1607+ | On Request | On Request |
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The Infineon BFQ19S H6327 is an RF NPN bipolar junction transistor (BJT) suitable for various high-frequency applications. It operates with a maximum Collector-Emitter Voltage (VCEO) of 15V and a maximum Collector-Base Voltage (VCBO) of 20V, with an Emitter-Base Voltage (VEBO) of 3V.
This transistor boasts a typical gain bandwidth product (fT) of 5.5 GHz and a maximum DC current gain (hFE) of 140, with a minimum DC collector/base gain (hfe) of 70. It can handle a continuous collector current (IC) of 120 mA and has a power dissipation (Pd) of 1W. The operating temperature range is from -65 C to +150 C.
Packaged in an SMD/SMT SOT-89-4 case, the BFQ19S H6327 is supplied on a reel. Its RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1 Unlimited. This component is part of Infineon's RF solutions portfolio, which includes transistors and other devices for RF applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
15 V.
5.5 GHz typical.
SOT-89-4 surface-mount package.
-65°C to +150°C.
120 mA.