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SSM3K335RLF The Toshiba SSM3K335RLF is an N-Channel MOSFET designed for efficient power switching. It features a 30V drain-source breakdown voltage and a continuous drain current of 6A.
Mfr Part #:

SSM3K335RLF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba SSM3K335RLF is an N-Channel MOSFET designed for efficient power switching. It features a 30V drain-source breakdown voltage and a continuous drain current of 6A.
✓ Total Stock: 8,274 pcs

SSM3K335RLF Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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8,274 pcs
On Request
8274 pcs On Request 1 On Request On Request 16+ On Request On Request
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SSM3K335RLF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SSM3K335RLF Description

Short technical summary and product information.

The Toshiba SSM3K335RLF is a single N-Channel MOSFET from the U-MOSVI series, designed for general-purpose electronic applications. It offers a drain-source breakdown voltage of 30V and a continuous drain current of 6A, with a low drain-source resistance of 56 mOhms. The gate-source threshold voltage ranges from 1.3V to 2.5V, and it operates within a temperature range of -55C to +150C.

 

This MOSFET is housed in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained designs. Its electrical characteristics include a gate-source voltage rating of 20V and a gate charge of 2.7 nC. The power dissipation is rated at 1W. The component is constructed using Silicon technology and is configured as a single channel device.

 

With its robust specifications and surface-mount capability, the SSM3K335RLF is a reliable choice for power management circuits, switching applications, and other electronic designs requiring efficient MOSFET performance.

SSM3K335RLF Quick Information

Product Type: MOSFET
Series: U-MOSVI
Canonical Name: Toshiba SSM3K335RLF N-Channel MOSFET
Subcategory: MOSFETs

SSM3K335RLF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM3K335RLF Features

  • N-Channel MOSFET with 30V breakdown voltage.
  • Continuous drain current of 6A.
  • Low drain-source resistance of 56 mOhms.
  • Compact SOT-23-3 surface-mount package.
  • Wide operating temperature range of -55C to +150C.

SSM3K335RLF Applications

  • Suitable for power switching applications.
  • Ideal for general-purpose electronic circuits.
  • Used in space-constrained designs.
  • Efficient for power management circuits.

SSM3K335RLF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum operating temperature of the SSM3K335RLF?

The maximum operating temperature is +150 C.

What is the package type for the SSM3K335RLF?

The SSM3K335RLF is housed in a SOT-23-3 surface-mount package.

What is the drain-source breakdown voltage of the SSM3K335RLF?

The drain-source breakdown voltage is 30 V.

What is the continuous drain current rating of the SSM3K335RLF?

The continuous drain current rating is 6 A.

What is the drain-source resistance of the SSM3K335RLF?

The drain-source resistance is 56 mOhms.

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