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248 pcs
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248 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Siemens BFQ19S is a low noise silicon bipolar RF transistor suitable for low noise, low distortion broadband amplifiers. It is designed for use in antenna and telecommunications systems operating up to 1.5 GHz, with collector currents ranging from 10 mA to 70 mA.
Key electrical characteristics include a transition frequency (fT) of 4 to 5.5 GHz at 70 mA and 8 V, and a minimum noise figure (NFmin) of 1.8 dB at 900 MHz. The maximum available power gain (Gma) is 11.5 dB at 900 MHz. The device also offers a third-order intercept point (IP3) of 32 dBm and a 1dB compression point (P-1dB) of 22 dBm at 1.8 GHz.
The transistor operates with a collector-emitter voltage (VCEO) of 15 V and a collector current (IC) up to 120 mA. It is housed in a Pb-free SOT89 package, suitable for surface mounting. The device is ESD sensitive and requires careful handling.
This RF transistor is qualified according to AEC-Q101.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the BFQ19S transistor is typically between 4 GHz and 5.5 GHz when measured at 70 mA collector current and 8 V collector-emitter voltage at 500 MHz.
The minimum noise figure (NFmin) for the BFQ19S is 1.8 dB at 900 MHz and 3 dB at 1.8 GHz, measured at 20 mA collector current and 6 V collector-emitter voltage.
The maximum available power gain (Gma) for the BFQ19S is 11.5 dB at 900 MHz and 7 dB at 1.8 GHz, measured at 70 mA collector current and 8 V collector-emitter voltage.
The BFQ19S is supplied in a SOT89 package.
The BFQ19S is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BFQ19S is 1 Unlimited.