BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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2,240 pcs
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2240 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Infineon Technologies BFP740FH6327 is a high-performance RF Bipolar Transistor utilizing SiGe technology. It is engineered for operation at frequencies up to 42 GHz, making it suitable for demanding RF applications.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO Max) of 4V and a Continuous Collector Current of 30mA. The device has a power dissipation (Pd) of 160mW. It operates within a temperature range of -65°C to +150°C.
This transistor is supplied in a TSFP-4 package and is designed for surface-mount (SMT) assembly. It is delivered on a reel, with a factory pack quantity of 3000 units, facilitating high-volume manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BFP740FH6327 operates at frequencies up to 42 GHz.
The maximum Collector-Emitter Voltage (VCEO Max) for the BFP740FH6327 is 4V.
The continuous collector current for the BFP740FH6327 is 30 mA.
The power dissipation (Pd) for this transistor is 160 mW.
The operating temperature range is from -65°C to +150°C.
The BFP740FH6327 is supplied in a TSFP-4 package.
This transistor is designed for SMD/SMT mounting.
