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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF245B is an N-Channel Junction Field-Effect Transistor (JFET) from On Semiconductor, originally sourced from Fairchild Semiconductor. It is designed for VHF/UHF amplifier applications. The device features a maximum drain-gate voltage of 30V and a gate-source voltage rating of -30V. For the BF245B variant, the zero-gate voltage drain current (I_DSS) ranges from 6 mA to 15 mA, and the common source forward transconductance (g_fs) is between 3 mS and 6.5 mS.
Power dissipation is rated at 350 mW at 25°C ambient temperature, with a derating factor of 2.8 mW/°C above 25°C. The operating junction temperature range is -55°C to 150°C. The gate-source cutoff voltage (V_GS(off)) spans from -0.5V to -8V.
This JFET is housed in a through-hole TO-92 package (TO-226-3 long body variant), with a gate, source, and drain pinout. The mounting type is through-hole, making it suitable for breadboard and prototype designs. The device is sourced from process 50, reflecting its manufacturing heritage.
Compliance information indicates RoHS3 compliance, though this is unverified. The part is listed as REACH unaffected and has an MSL rating of 1 (unlimited). However, these compliance flags are low confidence and should be verified with official documentation.
The maximum drain-gate voltage (V_DG) is 30 V, and the maximum gate-source voltage (V_GS) is -30 V.
The BF245B is available in a through-hole TO-92 package (TO-226-3, TO-92-3 Long Body).
The operating junction temperature range is -55°C to 150°C.
The BF245B is listed as RoHS3 compliant, but this status is unverified and should be confirmed with official documentation.
The zero-gate voltage drain current (I_DSS) for the BF245B variant is 6 mA to 15 mA at V_DS=15V, V_GS=0V.
The common source forward transconductance (g_fs) is 3 mS to 6.5 mS at V_DS=15V, V_GS=0V, f=1kHz.
The gate-source cutoff voltage (V_GS(off)) ranges from -0.5 V to -8 V at V_DS=15V, I_D=10nA.