| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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55 pcs
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55 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF245A is an N-Channel JFET (junction field-effect transistor) manufactured by ON Semiconductor (formerly Fairchild Semiconductor). It is designed for VHF/UHF amplifier applications, offering low noise and high gain. The device features a maximum drain-gate voltage of 30V, a maximum gate-source voltage of -30V, and a forward gate current limit of 10mA. Power dissipation is rated at 350mW at 25°C ambient, with a derating factor of 2.8mW/°C above 25°C. The operating and storage junction temperature range is -55°C to 150°C.
Electrical characteristics for the BF245A variant include a zero-gate voltage drain current (Idss) of 2mA to 6.5mA at VDS=15V and VGS=0, and a common-source forward transconductance of 3mS to 6.5mS at VDS=15V, VGS=0, f=1kHz. The gate-source cutoff voltage (VGS(off)) ranges from -0.4V to -2.2V at VDS=15V and ID=200µA. The gate reverse current is typically -5nA maximum at VGS=-20V.
The BF245A is housed in a TO-226-3 / TO-92-3 Long Body through-hole package, with a supplier device package of TO-92 (TO-226). It is suitable for use in RF amplifier stages, oscillators, and mixer circuits in consumer and industrial equipment. Note that the 100mA drain current rating sometimes associated with this part is likely erroneous; the datasheet specifies a maximum Idss of 6.5mA for the BF245A.
30V.
TO-226-3, TO-92-3 Long Body (through-hole).
-55°C to 150°C.
It is listed as RoHS3 Compliant, but this is unverified.
2 mA to 6.5 mA at VDS=15V, VGS=0.
3 mS to 6.5 mS at VDS=15V, VGS=0, f=1kHz.
-0.4 V to -2.2 V at VDS=15V, ID=200µA.