| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDY90 is a low-frequency power silicon NPN transistor manufactured by Harris Semiconductor. It is part of the BDY90 series, which includes variants like BDY91 and BDY92.
Key electrical specifications include a collector-base voltage (Vcbo) of 120V and a continuous collector current (Ic) of 10A. The operational temperature range for this transistor is from 0°C to 200°C.
This component is suitable for various low-frequency power applications where robust performance and a wide operating temperature range are required. Its NPN bipolar junction transistor (BJT) design makes it a versatile choice for amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (Vcbo) for the BDY90 transistor is 120V.
The continuous collector current (Ic) rating for the BDY90 is 10A.
The BDY90 transistor operates in a temperature range from 0°C to 200°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.