| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature |
The BDY90 is a silicon NPN transistor designed for low-frequency power applications. Manufactured by ST, this component offers a collector-emitter voltage (Vcbo) of 120V and a continuous collector current (Ic) of 10A. Its operational temperature range spans from 0°C to 200°C, making it suitable for various thermal environments.
This transistor belongs to the BDY90 series and is categorized under Transistors - Bipolar (BJT) - Single. While specific packaging and mounting details are not provided in the available data, its specifications suggest suitability for power switching and amplification circuits where robust voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage of the BDY90 is 120V.
The maximum collector current of the BDY90 is 10A.
The BDY90 operates within a temperature range of 0°C to 200°C.
RoHS compliance status is unverified.