| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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48 pcs
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48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDX53B is an NPN Epitaxial Silicon Transistor manufactured by ON Semiconductor, designed for applications such as hammer drivers, audio amplifiers, and power linear and switching circuits. It is a power Darlington transistor and a complement to the BDX54 series.
Key electrical characteristics include a maximum collector-emitter voltage of 100V and a continuous collector current of 8A. The device offers a high DC current gain of 750 (typical) at 3A collector current and 3V collector-emitter voltage. Saturation voltages are also specified, with VCE(sat) at a maximum of 2V and VBE(sat) at a maximum of 2.5V under specific test conditions.
The transistor is housed in a TO-220 package, suitable for through-hole mounting. It has a maximum collector dissipation of 60W at 25°C case temperature and operates within a junction temperature range of -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the BDX53B is 100V.
The continuous collector current rating for the BDX53B is 8A.
The typical DC current gain (hFE) of the BDX53B is 750 at 3A collector current and 3V collector-emitter voltage.
The BDX53B is supplied in a TO-220 package.
The maximum power dissipation for the BDX53B at 25°C is 60W.
