| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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45 pcs
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45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUT11AF is a high-voltage, high-speed, glass-passivated npn power transistor manufactured by ON Semiconductor. It is housed in a SOT186 package with an electrically insulated mounting base, making it suitable for various power electronic applications.
Key electrical characteristics include a collector-emitter voltage peak value (VCESM) of 1000 V and a continuous collector current (IC) of 5 A. The transistor also offers a collector-emitter saturation voltage (VCEsat) of up to 1.5 V and a total power dissipation (Ptot) of 20 W at 25°C heatsink temperature.
Dynamic characteristics include switching times such as turn-on time, turn-off storage time, and fall time, which are critical for switching applications. The transistor is designed for use in converters, inverters, switching regulators, and motor control systems, where high voltage and fast switching are required.
Thermal management is important, with a junction-to-heatsink thermal resistance (Rth j-hs) of 3.95 K/W and a junction-to-ambient thermal resistance (Rth j-a) of 55 K/W. The operating temperature range for storage is -65°C to 150°C, with a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCESM) for the BUT11AF is 1000 V.
The continuous collector current (IC) for the BUT11AF is 5 A.
The total power dissipation (Ptot) for the BUT11AF at a heatsink temperature of 25°C is 20 W.
The BUT11AF transistor is supplied in a SOT186 package.
The storage temperature range for the BUT11AF is -65°C to 150°C.
The junction-to-heatsink thermal resistance (Rth j-hs) for the BUT11AF, with heatsink compound, is typically 3.95 K/W.
The typical turn-off fall time for the BUT11AF with an inductive load is between 80 ns and 150 ns.