TK25A60X,S5X(M
Toshiba
The Toshiba TK25A60X,S5X(M is an N-channel MOSFET designed for switching regulator applications. It features a 600V drain-source voltage and a 25A drain current.
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDX34B is a complementary silicon PNP power Darlington transistor manufactured by STMicroelectronics. It is housed in a standard TO-220 plastic package, suitable for through-hole mounting.
This transistor is designed for power linear and switching applications. Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 100V and a maximum collector current (IC) of 10A. The device offers a maximum power dissipation (Ptot) of 70W at 25°C.
Operating temperature ranges from -65°C to 150°C, with a maximum junction temperature of 150°C. The thermal resistance from junction to case (Rthj-case) is 1.78°C/W.
Electrical specifications include a collector-emitter saturation voltage (VCE(sat)) of 2.5V at 3A and 6mA base current. The DC current gain (hFE) is a minimum of 750 at 3A and 3V collector-emitter voltage. A small signal current gain (hfe) of 100 is typical at 1A and 5V.
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| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BDX34B is 100V.
The BDX34B transistor has a maximum collector current (IC) of 10A.
The BDX34B has a maximum power dissipation (Ptot) of 70W at 25°C.
The operating temperature range for the BDX34B is -65°C to 150°C.
The BDX34B is supplied in a TO-220 package.