| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDX33B is a silicon epitaxial-base NPN power transistor from STMicroelectronics, featuring a monolithic Darlington configuration. It is designed for use in power linear and switching applications. This transistor is housed in a standard TO-220 plastic package.
Key electrical characteristics include a maximum collector current of 10A and a maximum total power dissipation of 70W at 25°C. The DC current gain (hFE) is a minimum of 750 at 3A collector current and 3V collector-emitter voltage. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 2.5V under specific test conditions.
Absolute maximum ratings specify a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of 80V for the BDX33B variant. The operating junction temperature (Tj) can reach up to 150°C, with storage temperatures ranging from -65°C to 150°C. The thermal resistance from junction to case (Rthj-case) is 1.78°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the BDX33B is 10A.
The total power dissipation (Ptot) for the BDX33B is 70W at or below 25°C case temperature.
The minimum DC current gain (hFE) for the BDX33B is 750 when tested at a collector current of 3A and a collector-emitter voltage of 3V.
The BDX33B transistor is supplied in a TO-220 package.
The maximum operating junction temperature (Tj) is 150°C, and the storage temperature range is -65°C to 150°C.
