TPCA8049-H
Toshiba
The Toshiba TPCA8049-H is an N-Channel MOSFET with a 40V drain-source voltage rating and a 32A continuous drain current. It is supplied in an SOP8 package.
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1,225 pcs
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1225 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD909 is a silicon Epitaxial-Base NPN power transistor manufactured by STMicroelectronics, housed in a standard Jedec TO-220 plastic package. It is intended for use in power linear and switching applications. The complementary PNP types are BD910 and BD912.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 80V and a maximum Collector Current (IC) of 15A. The device offers a maximum Total Power Dissipation (Ptot) of 90W at 25°C case temperature and a Thermal Resistance Junction-case (Rthj-case) of 1.4°C/W.
Additional specifications include a maximum Collector-Base Voltage (VCBO) of 80V and a maximum Emitter-Base Voltage (VEBO) of 5V. The DC Current Gain (hFE) varies with collector current, ranging from a minimum of 40 at 0.5A to 5 at 10A, with a typical value of 250 at 0.5A and 150 at 5A. The transition frequency (fT) is typically 3MHz at 0.5A and 4V.
The transistor operates within a storage temperature range of -65 to 150°C and a maximum operating junction temperature of 150°C. The TO-220 package is suitable for through-hole mounting.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD909 is 80V.
The BD909 transistor has a maximum collector current (IC) of 15A.
The BD909 transistor is supplied in a TO-220 package.
The typical DC current gain (hFE) of the BD909 at 0.5A collector current and 4V VCE is 250.
The transition frequency (fT) of the BD909 is typically 3MHz at 0.5A collector current and 4V VCE.