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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD678A from Motorola Semiconductor is a PNP bipolar transistor designed for power management and industrial applications. It features a high power dissipation capability of 65W and a significant DC current gain (hFE) of 20000, indicating its suitability for amplification and switching tasks.
This transistor is housed in a standard TO-220 package, which is designed for through-hole mounting. This mounting method facilitates integration into printed circuit boards for various electronic designs. The operating temperature range extends up to 150°C, allowing for reliable performance in demanding environments.
The BD678A is specified as RoHS3 Compliant and Lead Free, aligning with modern environmental standards. Its PNP polarity makes it suitable for specific circuit configurations where a PNP device is required. The component's technical parameters suggest it is a robust choice for applications requiring moderate power handling and amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BD678A transistor has PNP polarity.
The maximum power dissipation for the BD678A is 65 W.
The DC current gain (hFE) of the BD678A is 20000.
The maximum operating temperature for the BD678A is 150 C.
The BD678A is in a TO-220 package.
The BD678A transistor is mounted using the Through Hole method.
The manufacturing applications for the BD678A include Power Management and Industrial.