| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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26,241 pcs
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26241 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
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3,400 pcs
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3400 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The Toshiba TK80D08K3 is a silicon N-channel MOS Field Effect Transistor (FET) from Toshiba, designed for switching regulator applications. This MOSFET features a low drain-source ON-resistance of 3.6 mOhm (typical) and a high forward transfer admittance of 200 S. It can handle a maximum continuous drain current of 80A and a drain-source voltage of up to 75V.
The device operates in enhancement mode with a threshold voltage (Vth) ranging from 2.0 to 4.0V. It has a maximum gate-source voltage rating of 20V and a low leakage current of 10A (max) at 75V drain-source voltage. The power dissipation is rated at 100W.
Packaged in a TO-220W case, the TK80D08K3 is suitable for through-hole mounting. Its specifications make it a robust choice for various power switching applications where efficiency and reliability are critical.
The maximum drain-source voltage (Vds) for the TK80D08K3 is 75V.
The TK80D08K3 MOSFET has a maximum continuous drain current (Id) of 80A.
The typical on-state resistance (Rds(on)) for the TK80D08K3 is 3.6 mOhm when the gate-source voltage is 10V.
The TK80D08K3 is supplied in a TO-220W package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TK80D08K3 is 1 Unlimited.