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21 pcs
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21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD677 is an NPN - Darlington bipolar junction transistor (BJT) manufactured by STMicroelectronics. It is designed for applications requiring high current gain and switching capabilities. This transistor offers a collector-emitter breakdown voltage of 60V and can handle a maximum collector current of 4A, with a maximum power dissipation of 40W.
Key electrical characteristics include a Vce saturation of 2.5V at 30mA/1.5A and a minimum DC current gain (hFE) of 750 at 1.5A/3V. The collector cutoff current is rated at a maximum of 500µA. The operating temperature range extends up to 150°C (TJ).
This component is housed in a through-hole package, specifically TO-225AA or TO-126-3, with a supplier device package of SOT-32-3. It is suitable for various power management and switching applications where robust performance is required. The BD677 is RoHS3 compliant and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage of the BD677 transistor is 60V.
The BD677 transistor has a maximum collector current of 4A.
The maximum power dissipation for the BD677 transistor is 40W.
The BD677 is an NPN - Darlington transistor.
The BD677 transistor is mounted using the through-hole method.