| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Transistor Type |
The STMicroelectronics BD677 is a bipolar junction transistor (BJT) featuring an NPN Darlington configuration. This component is designed for through-hole mounting and comes in a TO-225AA / TO-126-3 package, with a supplier device package of SOT-32-3.
Key electrical characteristics include a maximum collector current of 4A and a collector-emitter breakdown voltage of 60V. It has a maximum power dissipation of 40W and a minimum DC current gain (hFE) of 750 at 1.5A and 3V. The saturation voltage (Vce Sat) is a maximum of 2.5V at 30mA/1.5A, and the collector cutoff current is 500µA.
This transistor operates at a maximum junction temperature of 150°C. It is RoHS3 compliant and has an MSL rating of 1 Unlimited. The BD677 is suitable for applications requiring high current gain and moderate voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the BD677 is 4 A.
The collector-emitter breakdown voltage (Vceo) for the BD677 is 60 V.
The maximum power dissipation for the BD677 is 40 W.
The operating temperature for the BD677 is up to 150°C (TJ).
The BD677 transistor is designed for through-hole mounting.