KA431AZ-TA
On Semiconductor
The KA431AZ-TA is a voltage reference integrated circuit from On Semiconductor. It features a typical reference voltage of 2.495V and is housed in a TO-92-3 package.
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD676A from NXP Semiconductors is a plastic medium-power silicon PNP Darlington transistor. This series is suitable for use as output devices in complementary general-purpose amplifier applications.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 45V for the BD676/BD676A variants, a maximum Collector Current (IC) of 4A, and a high DC Current Gain (hFE) of 750 minimum at 1.5A and 2.0A.
The transistor is housed in a TO-225AA package, designed for through-hole mounting. It operates within a junction temperature range of -55 to +150°C and has a thermal resistance of 3.13°C/W junction-to-case.
This component series is complementary to the BD675 series and some variants are equivalent to ON Semiconductor's MJE 700 series. Pb-Free packages are available.
| Qty | Low | High |
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the BD676A is 45 Vdc.
The maximum continuous collector current for the BD676A is 4 Adc.
The minimum DC current gain (hFE) for the BD676A is 750 at IC = 1.5 and 2.0 Adc.
The BD676A is available in a TO-225AA package.
The operating and storage junction temperature range for the BD676A is -55 to +150 °C.
