| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD649 is an NPN Darlington power transistor designed for robust performance in complementary AF push-pull output stages and general-purpose amplifier applications. It features a high DC current gain (hFE) of 750 minimum at 3A collector current and a collector-emitter breakdown voltage (Vce(br)) of 100V minimum.
This transistor is constructed from silicon and has a maximum emitter-base voltage of 5V. It is designed for through-hole mounting. The BD649 is part of the BD Series Power Transistors and is suitable for applications where high current gain and switching or amplification are crucial.
Key electrical specifications include a maximum collector current of 8A, power dissipation of 62W, a maximum collector-emitter voltage of 100V, and a maximum collector-base voltage of 120V. The DC current gain can reach up to 3000.
This component is identified by its type designator BD649 and is known for minimum lot-to-lot variations, ensuring reliable operation. It is a complementary AF push-pull output stage transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage for the BD649 is 100V.
The minimum DC current gain (hFE) of the BD649 at 3A collector current is 750.
The maximum emitter-base voltage for the BD649 is 5V.
The power dissipation of the BD649 is 62W.
The RoHS status of the BD649 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BD649 is 1 Unlimited.
The REACH status of the BD649 is REACH Unaffected.