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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD649 is an NPN Darlington power transistor manufactured by NXP Semiconductors. This component is designed for robust device performance and reliable operation, making it suitable for complementary AF push-pull output stage applications. It features a collector-emitter breakdown voltage of 100V minimum and a high DC current gain (hFE) of 750 minimum at 3A collector current. The maximum emitter-base voltage is rated at 5V.
A Darlington transistor, also known as a Darlington pair, is formed by combining two BJTs to achieve a very high current gain. This makes the BD649 suitable for applications where switching or amplification is crucial. The transistor is made of Silicon and has a power dissipation of 62W.
Key specifications include a maximum collector-emitter voltage of 100V and a maximum collector-base voltage of 120V. The material is Silicon, and it is designed for through-hole mounting.
Equivalent or alternate parts include BD605, BD610, BD633, BD634, BD635, BD636, BD637, and BD650.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage for the BD649 is 100V.
The BD649 has a minimum DC current gain (hFE) of 750 at a collector current of 3A.
The maximum emitter-base voltage for the BD649 is 5V.
The BD649 is an NPN Darlington power transistor.
The power dissipation for the BD649 transistor is 62W.
Equivalent or alternate parts for the BD649 include BD605, BD610, BD633, BD634, BD635, BD636, BD637, and BD650.