| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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390 pcs
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390 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD232 is an NPN Power Transistor manufactured by NXP Semiconductors. It is designed for applications requiring good linearity of hFE and a high collector-emitter breakdown voltage, rated up to 300V.
Key electrical specifications include a continuous collector current of 0.5A and a continuous base current of 0.25A. The transistor can dissipate up to 20W of power at 25°C case temperature. Its collector-emitter saturation voltage is a maximum of 1.0V at 150mA collector current and 15mA base current.
This transistor is suitable for use in power output stages and as a line driver, particularly in TV receivers. It operates within a junction temperature range of -55°C to 150°C and has a thermal resistance from junction to case of 6.25°C/W.
The BD232 is specified with a DC current gain (hFE) ranging from 25 to 150 at 50mA collector current and 5V collector-emitter voltage. At 150mA collector current, the minimum DC current gain is 20.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the BD232 is 500V.
The collector-emitter sustaining voltage (VCEO(SUS)) for the BD232 is a minimum of 300V.
The continuous collector current (IC) for the BD232 is 0.5A.
The maximum collector power dissipation (PC) for the BD232 at 25°C is 20W.
The DC current gain (hFE-1) of the BD232 at 50mA collector current and 5V collector-emitter voltage ranges from 25 to 150.
The junction temperature (TJ) for the BD232 ranges from -55°C to 150°C.
