| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,661 pcs
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6661 pcs | On Request | 1 | On Request | On Request | 0208+ | On Request | On Request | |
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAS216 from Philips is a silicon epitaxial planar diode designed for small signal switching applications. It comes in an 0805 SMD chip pattern.
Key electrical characteristics include a repetitive peak reverse voltage of 75V, an average rectified current of 150mA, and a maximum forward voltage of 1.25V at 100mA. The diode also features a low leakage current of 5uA at 75V and a capacitance of 4pF at 1MHz.
With a power dissipation of 200mW at 25°C, the BAS216 operates within a temperature range of -55°C to 150°C. It is lead-free and RoHS compliant.
This component is suitable for applications requiring small signal switching, operating at ambient temperatures below 55°C and voltages below 60V. It is not suitable for AC switching input as rectified circuits or high reverse voltage locations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage (VRRM) for the BAS216 diode is 75V.
The average rectified current for the BAS216 diode is 150mA when used in a half-wave rectified circuit with a resistive load.
The maximum forward voltage for the BAS216 diode is 1.0V at 10mA and 1.25V at 100mA.
The reverse leakage current for the BAS216 diode is a maximum of 0.025uA at 20V and 5uA at 75V.
The capacitance of the BAS216 diode is a maximum of 4pF at 0V reverse voltage and 1MHz frequency.
The operating and storage temperature range for the BAS216 diode is -55°C to 150°C.
The BAS216 diode is available in the 0805 SMD chip pattern.