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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
367,020 pcs
|
367020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Collector Capacitance (Cc) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cut-off Current (Iebo) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Hfe DC Current Gain (Minimum @ IC=-10 μA, VCE=-5 V) | |
| Hfe DC Current Gain (Minimum @ IC=-50 mA, VCE=-1 V (pulse) | |
| Icbo Collector Base Cutoff Current (Maximum @ VCB=-45 V, Tamb=150 °C) | |
| Icbo Collector Base Cutoff Current (Maximum @ VCB=-45 V, Tamb=25 °C) | |
| Mounting Type | |
| Operating Ambient Temperature (Tamb) | |
| Operating Temperature | |
| Peak Base Current (IBM) | |
| Peak Collector Current (ICM) | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range (TSTG) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Ambient (Rth(j-a)) | |
| Transistor Type | |
| Vbe Base Emitter Voltage (Minimum/Typical/Maximum @ IC=-2 mA, VCE=-5 V) | |
| Vbe Base Emitter Voltage (Typical @ IC=-10 μA, VCE=-5 V) | |
| Vbe Base Emitter Voltage (Typical @ IC=-50 mA, VCE=-1 V (pulse) | |
| Vbesat Base Emitter Saturation Voltage (Maximum @ IC=-10 mA, IB=-0.25 mA) | |
| Vbesat Base Emitter Saturation Voltage (Maximum @ IC=-50 mA, IB=-1.25 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vcesat Collector Emitter Saturation Voltage (Maximum @ IC=-10 mA, IB=-0.25 mA) | |
| Voltage |
BCX71J,215 is a PNP general purpose transistor from Nexperia USA Inc. It is designed for low current, low voltage, and low noise applications, making it suitable for low level, low frequency circuits and general purpose switching and amplification. The transistor is housed in a plastic SOT-23 surface-mount package (TO-236AB), which is widely used in hybrid circuits.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45 V, a maximum collector current (IC) of 100 mA, and a peak collector current (ICM) of 200 mA. The DC current gain (hFE) ranges from 250 to 460 at IC = 2 mA and VCE = 5 V, with a minimum gain of 100 at 50 mA. The transistor has a typical transition frequency (fT) of 100 MHz. Maximum power dissipation is 250 mW at 25°C ambient, with a junction temperature range of -65 to 150°C.
The BCX71J,215 features low collector capacitance (4.5 pF typical) and low saturation voltages (VCEsat up to 550 mV at 50 mA). It is the PNP complement to the BCX70 series NPN transistors. The device meets RoHS requirements (RoHS3 compliant) and is unaffected by REACH. Moisture sensitivity level is MSL 1 (unlimited).
This transistor is ideal for low noise audio amplifiers, driver stages in small signal circuits, and logic level switching. Its compact SOT-23 package enables high density board designs. For design flexibility, the same package family includes multiple hFE grades (BCX71H, J, K) to match gain requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.21 | $0.21 |
| 10+ | $0.12 | $0.12 |
| 100+ | $0.07 | $0.07 |
| 500+ | $0.05 | $0.05 |
| 1,000+ | $0.05 | $0.05 |
| 3,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Operating ambient temperature range is -65 to 150°C; maximum junction temperature is 150°C.
It is available in surface mount packages: TO-236-3, SC-59, SOT-23-3 (supplier package TO-236AB).
Maximum collector-emitter voltage (VCEO) is 45 V.
According to available data, it is RoHS3 Compliant (unverified).
At IC=2mA, VCE=5V, hFE ranges from 250 to 460. Minimum gain is 40 at 10µA and 100 at 50mA.
Maximum power dissipation (Ptot) is 250 mW at Tamb ≤ 25°C.
Typical transition frequency is 100 MHz.