| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,050 pcs
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3050 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Infineon Technologies BCX68-10 is an NPN Silicon AF Transistor suitable for general audio frequency (AF) applications. It offers a high collector current capability of 1A and a peak collector current of 2A.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 20V and a collector-base breakdown voltage (VCBO) of 25V. The device exhibits a typical DC current gain (hFE) of 85 at 500mA collector current and a low collector-emitter saturation voltage (VCEsat) of 0.5V maximum at 1A.
This transistor operates with a transition frequency (fT) of 100MHz. It is housed in a Pb-free, RoHS compliant SOT-89 surface-mount package, making it suitable for various general-purpose AF amplification and switching circuits where space is a consideration.
The BCX68-10 is qualified according to AEC Q101 standards and is designed for reliable performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BCX68-10 is 20V.
The continuous collector current (IC) rating for the BCX68-10 is 1A.
The BCX68-10 is supplied in a SOT-89 package.
The typical DC current gain (hFE) of the BCX68-10 at IC = 500 mA and VCE = 1 V is 85.
The typical transition frequency (fT) of the BCX68-10 is 100MHz.
The BCX68-10 is RoHS3 Compliant.