| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,900 pcs
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1900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Infineon BAS16-03W is a silicon switching diode engineered for high-speed switching applications. It offers a maximum reverse voltage of 80V and a peak reverse voltage of 85V. The diode can handle a forward current of up to 250mA for specific configurations and a non-repetitive peak surge forward current of 4.5A for 1µs pulses.
With a junction temperature rating of 150°C and a storage temperature range of -65°C to 150°C, the BAS16-03W is suitable for various operating environments. Its electrical characteristics include a breakdown voltage of 85V at 100µA and a low forward voltage, typically 715mV at 1mA and up to 1250mV at 150mA.
The diode capacitance is a maximum of 2pF at 1MHz and 0V reverse voltage, with a fast reverse recovery time of 4ns. The BAS16-03W is housed in a compact SOD323 surface-mount package, making it ideal for space-constrained designs.
This component is qualified according to AEC Q101 standards and is Pb-free, complying with RoHS directives. Its robust design and specifications make it a reliable choice for general-purpose high-speed switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VR) for the BAS16-03W is 80V.
The typical forward voltage (VF) for the BAS16-03W at 10mA is 855mV.
The BAS16-03W is available in the SOD323 package.
The reverse recovery time (trr) for the BAS16-03W is a maximum of 4ns.
Yes, the BAS16-03W is Pb-free and RoHS compliant.