| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BCX56-16T is an NPN power bipolar transistor designed for various applications including linear voltage regulators, MOSFET drivers, low-side switches, power management, and amplifiers. It features a high collector current capability and comes in a SOT89 (SC-62) surface-mount plastic package.
Key electrical specifications include a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A, with a peak collector current (ICM) of 2A for single pulses up to 1ms. The DC current gain (hFE) for the BCX56-16T variant is typically between 100 and 250 under specific test conditions (VCE = 2V, IC = 150mA).
This transistor is AEC-Q101 qualified, indicating its suitability for automotive applications. It offers high power dissipation capabilities, with maximum ratings dependent on the PCB mounting conditions, ranging from 500mW to 1100mW at 25°C ambient temperature. The operating and storage temperatures are rated from -65°C to 150°C, with a junction temperature limit of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 80V.
The maximum continuous collector current (IC) is 1A, with a peak rating of 2A for single pulses up to 1ms.
The DC current gain (hFE) is between 100 and 250 at VCE = 2V and IC = 150mA.
The BCX56-16T is available in a SOT89 (SC-62) surface-mount package.
The maximum power dissipation is 500mW when mounted on a standard FR4 PCB footprint, and can reach 1100mW with a 6cm² collector pad.
The junction temperature range is -55°C to +150°C.