| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,013 pcs
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3013 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request | |
|
1,289 pcs
|
1289 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PESD5V0S2BT is a bidirectional double ESD protection diode offering robust protection for two data lines against electrostatic discharge and other transients. It features a low diode capacitance of typically 35 pF, making it suitable for high-speed data lines.
Key electrical characteristics include a reverse standoff voltage of 5 V, a low clamping voltage of 14 V at 12 A peak pulse current, and an ultra-low leakage current of 5 nA at 5 V. The diode is rated for a maximum peak pulse power of 130 W (8/20 µs waveform).
This ESD protection diode meets IEC 61000-4-2 level 4 standards and is AEC-Q101 qualified, ensuring reliability in demanding applications. It is supplied in a small SOT23 (TO-236AB) surface-mounted device plastic package, ideal for space-constrained designs.
Applications for the PESD5V0S2BT include cellular handsets and accessories, portable electronics, computers and peripherals, communication systems, and audio/video equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse standoff voltage is 5 V (maximum) at 25 °C.
The maximum clamping voltage is 14 V at a peak pulse current of 12 A (8/20 µs).
The rated peak pulse current is 12 A (maximum) at tp = 8/20 µs.
It is available in a TO-236AB (SOT23) surface-mount package.
The device withstands 30 kV contact discharge per IEC 61000-4-2 and 10 kV per MIL-STD-883 HBM.
Diode capacitance is 35 pF typical, 45 pF maximum at 1 MHz and 0 V bias.
Maximum leakage current is 5 nA at VRWM = 5 V and 25 °C.