BCX56-16,135 NPN medium power transistor from Nexperia, rated for 80V collector-emitter voltage and 1A collector current. Offered in a surface-mount SOT-89 (SC-62) package.
Mfr Part #:

BCX56-16,135

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
NPN medium power transistor from Nexperia, rated for 80V collector-emitter voltage and 1A collector current. Offered in a surface-mount SOT-89 (SC-62) package.
Total Stock: 121,020 pcs
$ Price Range: $0.10 - $0.54

BCX56-16,135 Available from 1 distributor

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BCX56-16,135 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature Range
Base Current (IB)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Lead Pitch
Lead Style
Mounting Type
Operating Temperature
Package Description
Peak Collector Current (ICM)
Power
Power Dissipation (Maximum @ FR 4 PCB, mounting pad for collector 1 cm²)
Power Dissipation (Maximum @ FR 4 PCB, mounting pad for collector 6 cm²)
Power Dissipation (Maximum @ FR 4 PCB, standard footprint)
SVHC Present
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCX56-16,135 Description

Short technical summary and product information.

The BCX56-16,135 is an NPN medium power transistor from Nexperia, part of the BCX56 series. It is designed for general-purpose amplification and switching applications.

 

Key electrical characteristics include a maximum collector-emitter voltage of 80 V and a continuous collector current of 1 A, with peak current capability of 2 A. The DC current gain (hFE) ranges from 100 to 250 at VCE = 2 V and IC = 150 mA. The transistor features a maximum VCE saturation voltage of 500 mV at IB = 50 mA and IC = 500 mA, and a gain bandwidth product of 180 MHz.

 

The device is housed in a surface-mount SOT-89 (SC-62) plastic package with a 1.5 mm lead pitch. Power dissipation is 0.50 W under standard FR4 footprint, increasing to 1.35 W with a larger collector pad. The junction temperature range is -55 °C to 150 °C, with storage from -65 °C to 150 °C.

BCX56-16,135 Quick Information

Product Type: NPN Transistor
Series: BCX56-16
Canonical Name: BCX56-16,135 NPN Medium Power Transistor, 80V VCEO, 1A IC
Subcategory: Single NPN

BCX56-16,135 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCX56-16,135 Estimated Pricing

Qty Low High
1+ $0.54 $0.54
10+ $0.37 $0.37
100+ $0.24 $0.24
500+ $0.15 $0.15
1,000+ $0.13 $0.13
2,000+ $0.11 $0.11
4,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCX56-16,135 Features

  • NPN medium power transistor with 80V Vceo.
  • High collector current capability up to 1A.
  • DC current gain range 100 to 250 at 150mA.
  • Surface-mount SOT-89 (SC-62) package.
  • Gain bandwidth product of 180 MHz.

BCX56-16,135 Applications

  • Ideal for linear voltage regulators.
  • Suitable for low-side switching circuits.
  • Used in power management and battery-driven devices.

BCX56-16,135 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

Maximum 80 V (VCEO) with open base.

What is the package type?

SOT-89 (SC-62) surface-mount package.

What is the operating temperature range?

Junction temperature range -55°C to 150°C, storage range -65°C to 150°C.

Is the product RoHS compliant?

RoHS3 Compliant (status unverified).

What is the DC current gain (hFE)?

100 to 250 at VCE = 2 V, IC = 150 mA.

What is the maximum power dissipation?

0.50 W on standard FR4 footprint, up to 1.35 W with 6 cm² collector pad.

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