BCX55-10,115 NPN bipolar junction transistor rated for 60V collector-emitter breakdown and 1A continuous collector current. Housed in a surface-mount SOT-89 (TO-243AA) package.
Mfr Part #:

BCX55-10,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
NPN bipolar junction transistor rated for 60V collector-emitter breakdown and 1A continuous collector current. Housed in a surface-mount SOT-89 (TO-243AA) package.
Total Stock: 96,020 pcs
$ Price Range: $0.13 - $0.46

BCX55-10,115 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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96,020 pcs
96020 pcs On Request 1 On Request On Request On Request On Request On Request

BCX55-10,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCX55-10,115 Description

Short technical summary and product information.

The BCX55-10,115 is an NPN bipolar junction transistor from Nexperia USA Inc., designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 1A, making it suitable for medium-power circuits.

 

Key electrical characteristics include a DC current gain (hFE) of 63 minimum at 150mA collector current and 2V Vce, and a maximum Vce saturation voltage of 500mV at 500mA collector current with 50mA base current. The transistor offers a transition frequency of 180MHz, supporting moderate-speed switching operations. Power dissipation is rated at 1.25W.

 

The device is supplied in a surface-mount TO-243AA package, also known as SOT-89, which provides a compact footprint for automated assembly. The operating junction temperature range extends to 150°C.

BCX55-10,115 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BCX55-10,115 NPN Bipolar Transistor
Subcategory: Single NPN

BCX55-10,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCX55-10,115 Estimated Pricing

Qty Low High
1+ $0.46 $0.46
10+ $0.37 $0.37
100+ $0.24 $0.24
500+ $0.15 $0.15
1,000+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCX55-10,115 Features

  • NPN bipolar junction transistor design.
  • Rated for 60V collector-emitter breakdown.
  • Supports 1A continuous collector current.
  • Surface-mount SOT-89 (TO-243AA) package.
  • 180MHz transition frequency for moderate speed.

BCX55-10,115 Applications

  • General purpose switching and amplification.
  • Medium-power driver and interface circuits.
  • Power management in portable electronics.
  • Load switching in low-voltage systems.

BCX55-10,115 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the BCX55-10,115?

The maximum operating junction temperature is 150°C.

What package type does the BCX55-10,115 use?

It uses a TO-243AA package, also known as SOT-89, for surface-mount assembly.

Is the BCX55-10,115 RoHS compliant?

The database indicates RoHS3 compliance, but this is unverified and should be confirmed with the manufacturer.

What is the collector-emitter breakdown voltage of this transistor?

The collector-emitter breakdown voltage is 60V.

What is the maximum collector current rating?

The maximum continuous collector current is 1A.

What is the power dissipation of the BCX55-10,115?

The power dissipation is 1.25W.

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