| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
BCW71,215 is an NPN bipolar junction transistor (BJT) from Nexperia USA Inc. designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage of 45V and a continuous collector current rating of 100mA, with a power dissipation of 250mW.
The transistor provides a DC current gain (hFE) of minimum 110 at Ic=2mA and Vce=5V, and a maximum collector-emitter saturation voltage of 210mV at Ib=2.5mA and Ic=50mA. Its transition frequency is 100MHz, making it suitable for low-power high-frequency circuits.
The device is housed in a surface-mount TO-236AB (SOT-23) package, also designated as TO-236-3 or SC-59. Operating temperature range is up to 150°C junction temperature.
Typical applications include signal amplification, switching loads at low currents, and level shifting in battery-powered portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.35 | $0.35 |
| 10+ | $0.19 | $0.19 |
| 100+ | $0.13 | $0.13 |
| 500+ | $0.10 | $0.10 |
| 1,000+ | $0.08 | $0.08 |
| 3,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 45V.
The package is TO-236-3, SC-59, or SOT-23-3; supplier device package is TO-236AB, surface mount.
The maximum junction temperature is 150°C.
It is designated RoHS3 compliant, though this is unverified data.
The continuous collector current rating is 100mA.
Minimum hFE is 110 at Ic=2mA and Vce=5V.
The transition frequency is 100MHz.