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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
124,020 pcs
|
124020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Voltage (Typ @ Ic, Vce) | |
| Collector Capacitance | |
| Collector Current (DC) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (Minimum @ IC = -10 µA, VCE = -5 V) | |
| DC Current Gain (Minimum @ Ic=50 mA, Vce=1 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Capacitance | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Transition Frequency | |
| Vbe Saturation (Maximum @ Ib = -0.25 mA, Ic = -10 mA) | |
| Vbe Saturation (Maximum @ Ib = -1.25 mA, Ic = -50 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ Ib = -0.25 mA, Ic = -10 mA) | |
| Voltage |
The BCW61D,215 is a PNP general purpose transistor from Nexperia, designed for low voltage and low current switching and amplification applications. It features a maximum collector-emitter voltage (Vceo) of -32V and a maximum collector current (Ic) of -100mA DC, with a peak current capability of -200mA. The transistor offers a DC current gain (hFE) of 380 minimum at Ic = -2mA and Vce = -5V, ensuring consistent performance in typical amplifier circuits. With a transition frequency (fT) of 100 MHz minimum, it is suitable for moderate frequency signal processing.
The device is housed in a SOT23 (TO-236AB) surface mount package, enabling compact PCB designs. It has a maximum power dissipation of 250mW at 25°C ambient temperature when mounted on an FR4 board. The operating junction temperature range is up to 150°C, with storage temperature from -65°C to +150°C. The thermal resistance from junction to ambient is 500 K/W. This transistor is a direct replacement for the BCW61D grade and is available in tape and reel packaging for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.29 | $0.29 |
| 10+ | $0.17 | $0.17 |
| 100+ | $0.10 | $0.10 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
| 3,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is a PNP bipolar junction transistor.
The maximum collector-emitter voltage (Vceo) is -32V.
The maximum DC collector current is -100mA, with a peak current of -200mA.
The DC current gain (hFE) is 380 minimum at Ic = -2mA and Vce = -5V.
The transition frequency (fT) is 100 MHz minimum at Ic = -10mA, Vce = -5V.
It is available in a SOT23 (TO-236AB) surface mount package.
The junction temperature can reach 150°C, and storage temperature range is -65°C to +150°C.
The part is listed as RoHS3 compliant, but this status is unverified from the source data.