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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCW30,215 is a PNP bipolar junction transistor manufactured by Nexperia USA Inc. It features a collector-emitter voltage (Vceo) of 32 V, a continuous collector current (Ic) of 100 mA, and a power dissipation of 250 mW. The transistor offers a DC current gain (hFE) of 215 minimum at Ic=2mA, Vce=5V, and a collector-emitter saturation voltage (Vce(sat)) of 150 mV maximum at Ib=2.5mA, Ic=50mA. Its transition frequency (ft) is 100 MHz, suitable for low-frequency switching and amplification applications. This device is housed in a surface-mount package compatible with TO-236-3, SC-59, and SOT-23-3 outlines, with a supplier device package of TO-236AB. The junction operating temperature is rated up to 150°C (TJ). With its small footprint and standard SOT-23 package, the BCW30,215 is designed for general-purpose switching and amplification in space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.23 | $0.23 |
| 10+ | $0.14 | $0.14 |
| 100+ | $0.09 | $0.09 |
| 500+ | $0.06 | $0.06 |
| 1,000+ | $0.06 | $0.06 |
| 3,000+ | $0.05 | $0.05 |
| 6,000+ | $0.04 | $0.04 |
| 24,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BCW30,215 is offered in TO-236-3, SC-59, and SOT-23-3 packages; the supplier device package is TO-236AB.
The maximum junction operating temperature is 150°C (TJ).
It is marked as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.
It is a PNP bipolar junction transistor.
The collector-emitter voltage (Vceo) is 32 V.
The maximum continuous collector current is 100 mA.
The minimum DC current gain is 215 at Ic=2mA, Vce=5V.