BCW29,215 The BCW29,215 is a PNP bipolar junction transistor rated for 32V collector-emitter breakdown voltage and 100mA collector current. It offers a DC current gain of 120 minimum at 2mA/5V and a transition frequency of 100MHz.
Mfr Part #:

BCW29,215

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The BCW29,215 is a PNP bipolar junction transistor rated for 32V collector-emitter breakdown voltage and 100mA collector current. It offers a DC current gain of 120 minimum at 2mA/5V and a transition frequency of 100MHz.
Total Stock: 4,020 pcs
$ Price Range: $0.03 - $0.23

BCW29,215 Available from 1 distributor

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Non-Authorised
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BCW29,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCW29,215 Description

Short technical summary and product information.

The BCW29,215 is a PNP bipolar junction transistor manufactured by Nexperia USA Inc. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 32V and a maximum collector current of 100mA. The device provides a minimum DC current gain (hFE) of 120 at 2mA collector current and 5V collector-emitter voltage. The typical transition frequency is 100MHz, making it suitable for low-frequency to mid-frequency circuits.

 

The transistor is housed in a surface-mount SOT-23 (TO-236AB) package, which is also known as TO-236-3 or SC-59. Maximum power dissipation is 250mW, and the junction can operate up to 150°C.

BCW29,215 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BCW29
Canonical Name: Nexperia BCW29,215 PNP Bipolar Transistor
Subcategory: PNP

BCW29,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCW29,215 Estimated Pricing

Qty Low High
1+ $0.23 $0.23
10+ $0.14 $0.14
100+ $0.09 $0.09
500+ $0.06 $0.06
1,000+ $0.06 $0.06
3,000+ $0.05 $0.05
9,000+ $0.03 $0.03
24,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCW29,215 Features

  • PNP bipolar junction transistor design.
  • Rated for 32V collector-emitter breakdown voltage.
  • Supports 100mA maximum collector current.
  • Surface-mount SOT-23 package for compact designs.
  • 250mW maximum power dissipation capability.

BCW29,215 Applications

  • General-purpose switching and amplification circuits.
  • Low-power signal processing applications.
  • Driver stages in portable electronic devices.
  • Used in voltage regulation and current control.

BCW29,215 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the package type of the BCW29,215?

The BCW29,215 is offered in a surface-mount SOT-23 package (also specified as TO-236-3, SC-59, or SOT-23-3) with a supplier device package of TO-236AB.

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

What is the DC current gain of the BCW29,215?

The minimum DC current gain (hFE) is 120 at Ic=2mA and Vce=5V.

What is the collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (VCEO) is 32V.

What is the transition frequency of this transistor?

The transition frequency is 100 MHz.

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