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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature Range | |
| Applications | |
| Base-Emitter Saturation Voltage (Typical @ Ic = 10 mA, Ib = 0.5 mA) | |
| Base-Emitter Saturation Voltage (Typical @ Ic = 100 mA, Ib = 5 mA) | |
| Base-Emitter Voltage | |
| Collector Current (Maximum @ per transistor) | |
| Collector Emitter Voltage (Maximum @ open base) | |
| Collector-Base Cut-off Current (Maximum @ VCB=30 V, IE=0 A) | |
| Collector-Base Cut-off Current (Maximum @ VCB=30 V, IE=0 A, Tj=150 °C) | |
| Collector-Base Voltage | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ IC = 10 mA, IB = 0.5 mA) | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ Ic=100 mA, Ib=5 mA) | |
| Current Rating (Amps) | |
| DC Current Gain (Minimum @ VCE=5 V, IC=100 µA) | |
| DC Current Gain (Minimum/Maximum @ Vce=-5 V, Ic=-2 mA) | |
| Emitter-Base Cut-off Current | |
| Emitter-Base Voltage | |
| Junction Temperature | |
| Mounting Type | |
| Peak Base Current | |
| Peak Collector Current | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance from Junction to Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Voltage |
The Nexperia BCV61B,215 is a dual NPN general-purpose transistor designed for surface-mount applications. It is housed in a small SOT143B plastic package and features two matched NPN transistors. The device is rated for a maximum collector-emitter voltage of 30V and a maximum collector current of 100mA, with a peak collector current of 200mA. Total power dissipation is 250mW at an ambient temperature of 25°C.
This transistor is suitable for applications requiring matched pairs, such as current mirrors and circuits where the working point is independent of temperature. The DC current gain (hFE) ranges from 110 to 800 at VCE=5V and IC=2mA. The collector-emitter saturation voltage is typically 90mV at IC=10mA and IB=0.5mA.
The device is surface mountable and has a junction temperature range of -65 to +150°C. It is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.80 | $0.80 |
| 10+ | $0.55 | $0.55 |
| 100+ | $0.35 | $0.35 |
| 500+ | $0.22 | $0.22 |
| 1,000+ | $0.16 | $0.16 |
| 3,000+ | $0.14 | $0.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 30V.
The maximum collector current is 100mA per transistor, with a peak of 200mA.
The BCV61B is available in a SOT143B surface-mount package.
The ambient temperature range is -65 to +150 °C.
The BCV61B is listed as RoHS3 Compliant.
The DC current gain ranges from 110 to 800 at VCE=5V and IC=2mA.
The thermal resistance from junction to ambient is 500 K/W.