Mfr Part #:

BCR141S

Mfr Name: Infineon

The Infineon BCR141S is an NPN Silicon Digital Transistor designed for switching, inverter, and driver circuits. It features built-in bias resistors and a SOT-363 package.

✓ Total Stock: 1,421 pcs

$ Price Range: $0.99

BCR141S Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
ACK ELEKTRONIK ✓ Non-Authorised Inventory information	1,421 pcs On Request	1421 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BCR141S Description

Short technical summary and product information.

The Infineon BCR141S is an NPN Silicon Digital Transistor suitable for various applications including switching circuits, inverters, interface circuits, and driver circuits. It integrates built-in bias resistors, specifically R1 and R2, each with a typical value of 22kΩ.

Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 50V and a maximum collector current (IC) of 100mA. The device exhibits a typical DC current gain (hFE) of 50 at 5mA and a collector-emitter saturation voltage (VCEsat) of 0.3V maximum at 10mA.

This transistor operates with an input off voltage typically between 0.8V and 1.5V, and an input on voltage typically between 1V and 2.5V. It has a transition frequency (fT) of 130MHz at 10mA and 5V.

The BCR141S is housed in a SOT-363 package, designed for surface mounting. It has a maximum power dissipation of 250mW at a junction temperature up to 115°C and a storage temperature range of -65°C to 150°C.

BCR141S Quick Information

Product Type: NPN Silicon Digital Transistor

Series: BCR141S

Canonical Name: BCR141S NPN Silicon Digital Transistor

Subcategory: NPN

BCR141S Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BCR141S Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCR141S Features

NPN Silicon Digital Transistor
Built-in bias resistors (22kΩ typical)
50V collector-emitter breakdown voltage
100mA maximum collector current
SOT-363 surface mount package

BCR141S Applications

Used in switching circuits
Suitable for inverter circuits
Interface circuit applications
Driver circuit applications

BCR141S FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage for the BCR141S?

The collector-emitter breakdown voltage (VCEO) is 50V.

What is the maximum collector current for the BCR141S?

The maximum collector current (IC) is 100mA.

What is the typical DC current gain (hFE) of the BCR141S?

The typical DC current gain (hFE) is 50 at IC = 5 mA, VCE = 5 V.

What is the collector-emitter saturation voltage (VCEsat) for the BCR141S?

The collector-emitter saturation voltage (VCEsat) is a maximum of 0.3V.

What is the package type for the BCR141S?

The BCR141S is available in a SOT-363 package.

What are the built-in bias resistors in the BCR141S?

The BCR141S has built-in bias resistors R1 and R2, each with a typical value of 22kΩ.

What is the transition frequency of the BCR141S?

The transition frequency (fT) is 130MHz.

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