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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
84,020 pcs
|
84020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
37,071 pcs
|
37071 pcs | On Request | 1 | On Request | On Request | 21+20 | On Request | On Request | |
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector-Base Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| P(tot) (Maximum @ Tamb ≤ 25 °C, FR 4 PCB 6 cm² collector pad) | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| T_STG (Minimum/Maximum) | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| h(FE) (Minimum/Maximum @ V(CE)=2 V, I(C)=150 mA) |
The BCP56-16TX is an NPN medium power transistor from Nexperia, part of the BCP56T series. It is designed for general-purpose switching and amplification in surface-mount applications. The device features a collector-emitter breakdown voltage of 80 V and a maximum collector current of 1 A, with a peak current capability of 2 A.
Key electrical characteristics include a DC current gain (hFE) range of 100 to 250 at 150 mA and 2 V, a transition frequency of 100 MHz, and a collector-emitter saturation voltage of 500 mV at 500 mA. The transistor is capable of dissipating up to 1.3 W on a standard FR4 PCB with a 6 cm² collector pad.
The BCP56-16TX is supplied in the SOT-223 (SC-73) surface-mount package, which features an increased heatsink for improved thermal performance. The operating junction temperature range is -65 °C to 150 °C. This device is suitable for linear voltage regulators, MOSFET drivers, high-side switches, and power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.55 | $0.55 |
| 10+ | $0.38 | $0.38 |
| 100+ | $0.24 | $0.24 |
| 500+ | $0.15 | $0.15 |
| 1,000+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 80 V with the base open.
The maximum continuous collector current (IC) is 1 A, with a peak current (ICM) of 2 A for a single pulse.
It is available in a surface-mount SOT-223 (TO-261AA) package.
The maximum operating junction temperature is 150 °C, and the storage temperature range is -65 °C to 150 °C.
The DC current gain (hFE) is between 100 and 250 at VCE = 2 V and IC = 150 mA.
The typical transition frequency (fT) is 100 MHz.
The maximum collector-emitter saturation voltage (VCE(sat)) is 500 mV at IB = 50 mA and IC = 500 mA.