| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
137,000 pcs
|
137000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | 1521/1346 | On Request | On Request | |
|
790 pcs
|
790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BCP55 from NXP Semiconductors is an NPN medium power transistor housed in a SOT223 plastic package. This device is suitable for switching applications and offers a high current capability of up to 1A and a low voltage rating of up to 60V.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 1A. The DC current gain (hFE) ranges from 63 to 250 depending on the specific variant and operating conditions. The transition frequency (fT) is typically 130MHz at 10mA and 5V.
The transistor operates within a wide temperature range from -65°C to +150°C. It is mounted in a SOT223 package, which is surface mountable and includes a collector pad for good heat transfer. The thermal resistance from junction to ambient (Rth j-a) is 94 K/W.
PNP complements for this series include the BCP51, BCP52, and BCP53.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BCP55 is 60V.
The maximum continuous collector current (IC) for the BCP55 is 1A.
The BCP55 transistor is supplied in a SOT-223 surface mount package.
The typical transition frequency (fT) for the BCP55 is 130MHz.
The operating ambient temperature range for the BCP55 is -65°C to +150°C.