PMBFJ111 The PMBFJ111 is an N-channel junction FET from NXP Semiconductors, housed in a SOT23 package. It offers high-speed switching capabilities and interchangeability of drain and source connections.
Mfr Part #:

PMBFJ111

Available from 1 distributors
Mfr Name: Philips
Philips
The PMBFJ111 is an N-channel junction FET from NXP Semiconductors, housed in a SOT23 package. It offers high-speed switching capabilities and interchangeability of drain and source connections.
✓ Total Stock: 1,630 pcs
$ Price Range: $0.99

PMBFJ111 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,630 pcs
1630 pcs On Request 1 On Request On Request On Request On Request On Request

PMBFJ111 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Junction Temperature
Lead Style
Mounting Type
SVHC Present
Storage Temperature

PMBFJ111 Description

Short technical summary and product information.

The PMBFJ111 is a symmetrical N-channel junction field-effect transistor (JFET) manufactured by NXP Semiconductors, presented in a compact SOT23 package. This component is designed for high-speed switching applications and features interchangeable drain and source connections, simplifying circuit design.

 

Key electrical characteristics include a drain-source voltage rating of ±40V and a gate-source voltage rating of -40V. The device exhibits a low R DSon of less than 30 Ω at zero gate voltage for the PMBFJ111 variant. It also offers a gate-source leakage current of 1nA and a drain-source leakage current that varies by specific model, with the PMBFJ111 showing 20mA at VGS=0V and VDS=15V.

 

Applications for the PMBFJ111 include analog switches, choppers, commutators, and multiplexers. Its robust design and performance make it suitable for thin and thick film hybrid circuits. The SOT23 package is designed for surface mounting, facilitating integration into various electronic assemblies.

 

Thermal considerations include a maximum junction temperature of 150°C and a total power dissipation of 300mW at 25°C ambient temperature. Thermal resistance from junction to ambient is approximately 430 K/W when mounted on a ceramic substrate.

PMBFJ111 Quick Information

Product Type: JFET
Canonical Name: PMBFJ111 N-channel Junction FET
Subcategory: N-channel Junction FETs

PMBFJ111 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMBFJ111 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMBFJ111 Features

  • High-speed switching capability.
  • Interchangeable drain and source.
  • Low R DSon at zero gate voltage.
  • SOT23 surface mount package.
  • Suitable for analog switches and choppers.

PMBFJ111 Applications

  • Used in analog switches.
  • Suitable for chopper circuits.
  • Applicable for commutators.
  • Ideal for multiplexer designs.
  • Used in thick and thin film hybrids.

PMBFJ111 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the PMBFJ111?

40V DC.

What is the power dissipation of the PMBFJ111?

300mW at 25°C ambient.

What is the drain-source leakage current (IDSS) for the PMBFJ111?

Minimum 20mA at VGS=0V, VDS=15V.

What is the on-resistance (RDSon) of the PMBFJ111?

Less than 30 ohms at zero gate voltage.

What is the gate-source breakdown voltage?

Minimum -40V.

What is the package type of the PMBFJ111?

SOT23 surface mount.

What is the storage temperature range?

-65°C to +150°C.

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