| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,630 pcs
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1630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present | |
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The PMBFJ111 is a symmetrical N-channel junction field-effect transistor (JFET) manufactured by NXP Semiconductors, presented in a compact SOT23 package. This component is designed for high-speed switching applications and features interchangeable drain and source connections, simplifying circuit design.
Key electrical characteristics include a drain-source voltage rating of ±40V and a gate-source voltage rating of -40V. The device exhibits a low R DSon of less than 30 Ω at zero gate voltage for the PMBFJ111 variant. It also offers a gate-source leakage current of 1nA and a drain-source leakage current that varies by specific model, with the PMBFJ111 showing 20mA at VGS=0V and VDS=15V.
Applications for the PMBFJ111 include analog switches, choppers, commutators, and multiplexers. Its robust design and performance make it suitable for thin and thick film hybrid circuits. The SOT23 package is designed for surface mounting, facilitating integration into various electronic assemblies.
Thermal considerations include a maximum junction temperature of 150°C and a total power dissipation of 300mW at 25°C ambient temperature. Thermal resistance from junction to ambient is approximately 430 K/W when mounted on a ceramic substrate.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V DC.
300mW at 25°C ambient.
Minimum 20mA at VGS=0V, VDS=15V.
Less than 30 ohms at zero gate voltage.
Minimum -40V.
SOT23 surface mount.
-65°C to +150°C.