PUMD10,115
NXP Semiconductors
The NXP Semiconductors PUMD10,115 is a pre-biased bipolar transistor array featuring 1 NPN and 1 PNP transistor. It operates at up to 50V and 100mA.
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2,952 pcs
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2952 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,952 pcs
|
2952 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BCP54,115 from NXP Semiconductors is an NPN bipolar junction transistor (BJT) suitable for various electronic applications. This component offers a collector-emitter breakdown voltage of 45V and can handle a continuous collector current of up to 1A.
It is packaged in a surface-mount SOT-223 case, making it convenient for integration into compact circuit designs. The transistor's specifications indicate its suitability for amplification and switching tasks within its voltage and current ratings.
As a pre-biased transistor, it simplifies circuit design by including internal biasing resistors. This feature can reduce component count and board space in certain applications. The RoHS3 compliant status suggests adherence to environmental regulations regarding hazardous substances.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BCP54,115 is an NPN bipolar junction transistor.
The maximum collector-emitter breakdown voltage is 45V.
The maximum continuous collector current is 1A.
The BCP54,115 is available in a SOT-223 package.
The BCP54,115 is RoHS3 Compliant.
The MSL is 1 Unlimited.
The REACH status is Unaffected.
